GT8Q102 IGBT Transistor

The GT8Q102 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT8Q102 transistor as follows.

GT8Q102 Transistor Specification

Transistor Code		GT8Q102
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK
Collector Power Dissipation (Maximum)	Pc	50W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		500

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