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GT8J101 IGBT Transistor

The GT8J101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT8J101 transistor as follows.

Circuit diagram symbol of the GT8J101 transistor

GT8J101 Transistor Specification

Transistor Code GT8J101
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISO220
Collector Power Dissipation (Maximum) Pc 30W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 4V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 350

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