GT8J101 IGBT Transistor

The GT8J101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT8J101 transistor as follows.

GT8J101 Transistor Specification

Transistor Code		GT8J101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISO220
Collector Power Dissipation (Maximum)	Pc	30W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		350

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