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GT8G121LB IGBT Transistor

The GT8G121LB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT8G121LB transistor as follows.

Circuit diagram symbol of the GT8G121LB transistor

GT8G121LB Transistor Specification

Transistor Code GT8G121LB
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package DP(LB)
Collector Power Dissipation (Maximum) Pc 20W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 4.5V
Collector-Emitter Saturation Voltage VCE(on) 7V
Collector Current (Maximum) IC 150A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 2000

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