GT8G103 IGBT Transistor

The GT8G103 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT8G103 transistor as follows.

GT8G103 Transistor Specification

Transistor Code		GT8G103
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DP
Collector Power Dissipation (Maximum)	Pc	20W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	4.5V
Collector-Emitter Saturation Voltage	VCE(on)	8V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		2000

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