GT8G102 IGBT Transistor

The GT8G102 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT8G102 transistor as follows.

GT8G102 Transistor Specification

Transistor Code		GT8G102
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TOP3
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector-Emitter Saturation Voltage	VCE(on)	8V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		2000

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