GT80J101 IGBT Transistor

The GT80J101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT80J101 transistor as follows.

GT80J101 Transistor Specification

Transistor Code		GT80J101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	15V
Collector-Emitter Saturation Voltage	VCE(on)	3.5V
Collector Current (Maximum)	IC	80A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		350

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