GT60N321 IGBT Transistor

The GT60N321 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT60N321 transistor as follows.

GT60N321 Transistor Specification

Transistor Code		GT60N321
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-21F2C
Collector Power Dissipation (Maximum)	Pc	170W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		230

UXPython is not the creator or an official representative of the GT60N321 IGBT transistor. You can download the official GT60N321 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

HGTG40N60A4 IGBT Transistor IXGT60N60 IGBT Transistor IXYP8N90C3D1 IGBT Transistor IXGT15N120CD1 IGBT Transistor IXGX72N60B3H1 IGBT Transistor APTGF300DA120 IGBT Transistor SG35N12DT IGBT Transistor IRG4PSH71KD IGBT Transistor IXBT28N170A IGBT Transistor APT80GA90S IGBT Transistor STGF14NC60KD IGBT Transistor IXYP8N90C3 IGBT Transistor IXSH16N60U1 IGBT Transistor MMG100SR120B IGBT Transistor APTGT75TDU120P IGBT Transistor MMG100SR120UA IGBT Transistor KGF40N120KDA IGBT Transistor RJH1CV6DPQ-E0 IGBT Transistor IXYP50N65C3 IGBT Transistor SKM100GAL123D IGBT Transistor