GT60M101 IGBT Transistor

The GT60M101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT60M101 transistor as follows.

GT60M101 Transistor Specification

Transistor Code		GT60M101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector-Emitter Voltage (Maximum)	VCE	900V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		700

UXPython is not the creator or an official representative of the GT60M101 IGBT transistor. You can download the official GT60M101 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

APT50GN60BG IGBT Transistor MIXA30WB1200TED IGBT Transistor APT36GA60B IGBT Transistor IXGT32N170A IGBT Transistor APTGT100SK170D1 IGBT Transistor HGT1S5N120BNS IGBT Transistor STGWA40H120DF2 IGBT Transistor IXGH50N90B2 IGBT Transistor IXXR110N65B4H1 IGBT Transistor FGM622S IGBT Transistor MMG100SR060UZA IGBT Transistor GT15Q301 IGBT Transistor IXBV22N300S IGBT Transistor KGF30N135NDH IGBT Transistor IXGM25N100A IGBT Transistor AOB10B60D IGBT Transistor MMG200DR120UK IGBT Transistor SGF15N90D IGBT Transistor SGH15N120RUFD IGBT Transistor SKM600GA176D IGBT Transistor