GT60J323H IGBT Transistor

The GT60J323H is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT60J323H transistor as follows.

GT60J323H Transistor Specification

Transistor Code		GT60J323H
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-21F2C
Collector Power Dissipation (Maximum)	Pc	170W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC

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