GT5G133 IGBT Transistor

The GT5G133 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT5G133 transistor as follows.

GT5G133 Transistor Specification

Transistor Code		GT5G133
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TSON8
Collector Power Dissipation (Maximum)	Pc	0.83W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	4V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	130(pulse)A
Operating Junction Temperature (Maximum)		150 oC

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