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GT5G133 IGBT Transistor

The GT5G133 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT5G133 transistor as follows.

Circuit diagram symbol of the GT5G133 transistor

GT5G133 Transistor Specification

Transistor Code GT5G133
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TSON8
Collector Power Dissipation (Maximum) Pc 0.83W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 4V
Collector-Emitter Saturation Voltage VCE(on) 3V
Collector Current (Maximum) IC 130(pulse)A
Operating Junction Temperature (Maximum) 150 oC

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