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GT5G102LB IGBT Transistor

The GT5G102LB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT5G102LB transistor as follows.

Circuit diagram symbol of the GT5G102LB transistor

GT5G102LB Transistor Specification

Transistor Code GT5G102LB
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package DP(LB)
Collector Power Dissipation (Maximum) Pc 20W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 12V
Collector-Emitter Saturation Voltage VCE(on) 8V
Collector Current (Maximum) IC 130A
Operating Junction Temperature (Maximum) 150 oC

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