GT50N322A IGBT Transistor

The GT50N322A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT50N322A transistor as follows.

GT50N322A Transistor Specification

Transistor Code		GT50N322A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-16C1C
Collector Power Dissipation (Maximum)	Pc	156W
Collector-Emitter Voltage (Maximum)	VCE	1000V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		230

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