GT50M101 IGBT Transistor

The GT50M101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT50M101 transistor as follows.

GT50M101 Transistor Specification

Transistor Code		GT50M101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector-Emitter Voltage (Maximum)	VCE	900V
Collector-Emitter Saturation Voltage	VCE(on)	5V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		400

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