GT50JR22 IGBT Transistor

The GT50JR22 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT50JR22 transistor as follows.

GT50JR22 Transistor Specification

Transistor Code		GT50JR22
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO-3PN
Collector Power Dissipation (Maximum)	Pc	230W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	2.2V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		180

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