GT50J121 IGBT Transistor

The GT50J121 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT50J121 transistor as follows.

GT50J121 Transistor Specification

Transistor Code		GT50J121
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-21F2C
Collector Power Dissipation (Maximum)	Pc	240W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC

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