GT50J102 IGBT Transistor

The GT50J102 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT50J102 transistor as follows.

GT50J102 Transistor Specification

Transistor Code		GT50J102
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		300

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