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GT50G102 IGBT Transistor

The GT50G102 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT50G102 transistor as follows.

Circuit diagram symbol of the GT50G102 transistor

GT50G102 Transistor Specification

Transistor Code GT50G102
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TOP3
Collector-Emitter Voltage (Maximum) VCE 400V
Collector-Emitter Saturation Voltage VCE(on) 8V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 3000

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