GT50G101 IGBT Transistor

The GT50G101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT50G101 transistor as follows.

GT50G101 Transistor Specification

Transistor Code		GT50G101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TOP3
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector-Emitter Saturation Voltage	VCE(on)	8V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		3000

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