GT45F128 IGBT Transistor

The GT45F128 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT45F128 transistor as follows.

GT45F128 Transistor Specification

Transistor Code		GT45F128
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220SIS
Collector Power Dissipation (Maximum)	Pc	26W
Collector-Emitter Voltage (Maximum)	VCE	330V
Collector-Emitter Saturation Voltage	VCE(on)	1.45V
Collector Current (Maximum)	IC	200(pulse)A

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