GT45F127 IGBT Transistor

The GT45F127 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT45F127 transistor as follows.

GT45F127 Transistor Specification

Transistor Code		GT45F127
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220SIS
Collector Power Dissipation (Maximum)	Pc	26W
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	200(pulse)A

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