GT40M101 IGBT Transistor

The GT40M101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT40M101 transistor as follows.

GT40M101 Transistor Specification

Transistor Code		GT40M101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TOP3
Collector-Emitter Voltage (Maximum)	VCE	900V
Gate-Emitter Voltage (Maximum)	VGE	15V
Collector-Emitter Saturation Voltage	VCE(on)	3.4V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		400

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