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GT40J322 IGBT Transistor

The GT40J322 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT40J322 transistor as follows.

Circuit diagram symbol of the GT40J322 transistor

GT40J322 Transistor Specification

Transistor Code GT40J322
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package 2-16C1C
Collector Power Dissipation (Maximum) Pc 120W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 25V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 150 oC

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