GT30J322 IGBT Transistor

The GT30J322 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT30J322 transistor as follows.

GT30J322 Transistor Specification

Transistor Code		GT30J322
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TOP3
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	15V
Collector-Emitter Saturation Voltage	VCE(on)	3V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		400

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