GT30J126 IGBT Transistor

The GT30J126 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT30J126 transistor as follows.

GT30J126 Transistor Specification

Transistor Code		GT30J126
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-16F1A
Collector Power Dissipation (Maximum)	Pc	90W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC

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