GT30J122 IGBT Transistor

The GT30J122 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT30J122 transistor as follows.

GT30J122 Transistor Specification

Transistor Code		GT30J122
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-16F1A
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC

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