GT30F131 IGBT Transistor

The GT30F131 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT30F131 transistor as follows.

GT30F131 Transistor Specification

Transistor Code		GT30F131
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO-220SM
Collector Power Dissipation (Maximum)	Pc	140W
Collector-Emitter Voltage (Maximum)	VCE	360V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	200(pulse)A

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