GT30F125 IGBT Transistor

The GT30F125 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT30F125 transistor as follows.

GT30F125 Transistor Specification

Transistor Code		GT30F125
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220SIS
Collector Power Dissipation (Maximum)	Pc	25W
Collector-Emitter Voltage (Maximum)	VCE	330V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	200(pulse)A

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