GT25Q101 IGBT Transistor

The GT25Q101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT25Q101 transistor as follows.

GT25Q101 Transistor Specification

Transistor Code		GT25Q101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	200W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		500

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