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GT25H101 IGBT Transistor

The GT25H101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT25H101 transistor as follows.

Circuit diagram symbol of the GT25H101 transistor

GT25H101 Transistor Specification

Transistor Code GT25H101
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TOP3
Collector-Emitter Voltage (Maximum) VCE 500V
Collector-Emitter Saturation Voltage VCE(on) 4V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 1000

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