GT25G101 IGBT Transistor

The GT25G101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT25G101 transistor as follows.

GT25G101 Transistor Specification

Transistor Code		GT25G101
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		IPAK
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	8V
Collector Current (Maximum)	IC	170A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		6000

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