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GT25G101 IGBT Transistor

The GT25G101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT25G101 transistor as follows.

Circuit diagram symbol of the GT25G101 transistor

GT25G101 Transistor Specification

Transistor Code GT25G101
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package IPAK
Collector Power Dissipation (Maximum) Pc 60W
Collector-Emitter Voltage (Maximum) VCE 400V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 8V
Collector Current (Maximum) IC 170A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 6000

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