GT20G102 IGBT Transistor

The GT20G102 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT20G102 transistor as follows.

GT20G102 Transistor Specification

Transistor Code		GT20G102
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		IPAK
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	12V
Collector-Emitter Saturation Voltage	VCE(on)	8V
Collector Current (Maximum)	IC	130A
Operating Junction Temperature (Maximum)		150 oC

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