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GT15J103 IGBT Transistor

The GT15J103 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT15J103 transistor as follows.

Circuit diagram symbol of the GT15J103 transistor

GT15J103 Transistor Specification

Transistor Code GT15J103
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package DPAK
Collector Power Dissipation (Maximum) Pc 70W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 4V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 350

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