GT15J102 IGBT Transistor

The GT15J102 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT15J102 transistor as follows.

GT15J102 Transistor Specification

Transistor Code		GT15J102
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISO220
Collector Power Dissipation (Maximum)	Pc	35W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	4V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1100pF
Rise Time		400

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