GT10Q311 IGBT Transistor

The GT10Q311 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT10Q311 transistor as follows.

GT10Q311 Transistor Specification

Transistor Code		GT10Q311
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		DPAK
Collector Power Dissipation (Maximum)	Pc	90W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.8V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		320

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