GT10J303 IGBT Transistor

The GT10J303 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT10J303 transistor as follows.

GT10J303 Transistor Specification

Transistor Code		GT10J303
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-10R1C
Collector Power Dissipation (Maximum)	Pc	30W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC

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