GT10G131 IGBT Transistor

The GT10G131 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT10G131 transistor as follows.

GT10G131 Transistor Specification

Transistor Code		GT10G131
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		2-6J1C
Collector Power Dissipation (Maximum)	Pc	1.9W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	200(pulse)A
Operating Junction Temperature (Maximum)		150 oC

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