GA600GD25S IGBT Transistor

The GA600GD25S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GA600GD25S transistor as follows.

GA600GD25S Transistor Specification

Transistor Code		GA600GD25S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		INT-A-PAK
Collector Power Dissipation (Maximum)	Pc	1920W
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector-Emitter Saturation Voltage	VCE(on)	1.40V
Collector Current (Maximum)	IC	600A
Operating Junction Temperature (Maximum)		150 oC

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