GA500TD60U IGBT Transistor

The GA500TD60U is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GA500TD60U transistor as follows.

GA500TD60U Transistor Specification

Transistor Code		GA500TD60U
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		INT-A-PAK
Collector Power Dissipation (Maximum)	Pc	1550W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.40V
Collector Current (Maximum)	IC	500A
Operating Junction Temperature (Maximum)		150 oC

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