GA400TD25S IGBT Transistor

The GA400TD25S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GA400TD25S transistor as follows.

GA400TD25S Transistor Specification

Transistor Code		GA400TD25S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		INT-A-PAK
Collector Power Dissipation (Maximum)	Pc	1350W
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector-Emitter Saturation Voltage	VCE(on)	1.60V
Collector Current (Maximum)	IC	400A
Operating Junction Temperature (Maximum)		150 oC

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