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GA300TD60U IGBT Transistor

The GA300TD60U is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GA300TD60U transistor as follows.

Circuit diagram symbol of the GA300TD60U transistor

GA300TD60U Transistor Specification

Transistor Code GA300TD60U
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package INT-A-PAK
Collector Power Dissipation (Maximum) Pc 880W
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.30V
Collector Current (Maximum) IC 300A
Operating Junction Temperature (Maximum) 150 oC

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