GA250TS60U IGBT Transistor

The GA250TS60U is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GA250TS60U transistor as follows.

GA250TS60U Transistor Specification

Transistor Code		GA250TS60U
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		INT-A-PAK
Collector Power Dissipation (Maximum)	Pc	780W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	250A
Operating Junction Temperature (Maximum)		150 oC

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