GA200TD120U IGBT Transistor

The GA200TD120U is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GA200TD120U transistor as follows.

GA200TD120U Transistor Specification

Transistor Code		GA200TD120U
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		INT-A-PAK
Collector Power Dissipation (Maximum)	Pc	1040W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.80V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC

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