GA200SA60U IGBT Transistor

The GA200SA60U is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GA200SA60U transistor as follows.

GA200SA60U Transistor Specification

Transistor Code		GA200SA60U
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SOT227
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	1.90V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC

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