G8P50G IGBT Transistor

The G8P50G is a P-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the G8P50G transistor as follows.

G8P50G Transistor Specification

Transistor Code		G8P50G
Transistor Type		IGBT
IGBT Control Channel Type		P-Channel
Package		TO252AA
Collector Power Dissipation (Maximum)	Pc	66W
Collector-Emitter Voltage (Maximum)	VCE	500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		45

UXPython is not the creator or an official representative of the G8P50G IGBT transistor. You can download the official G8P50G IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel IGBT

HGTD8P50G1S IGBT Transistor PPNHZ52F120B IGBT Transistor TA49015 IGBT Transistor HGTD8P50G1 IGBT Transistor MSAHX60F60B IGBT Transistor PPNGZ52F120B IGBT Transistor MSAGX60F60B IGBT Transistor MSAHX75L60D IGBT Transistor MSAGZ52F120B IGBT Transistor MSAHZ52F120B IGBT Transistor MSAGX75F60B IGBT Transistor HGTD8P50G1S9A IGBT Transistor