G6N50E IGBT Transistor

The G6N50E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the G6N50E transistor as follows.

G6N50E Transistor Specification

Transistor Code		G6N50E
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252AA
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	7.5A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		90

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