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G12N50C1 IGBT Transistor

The G12N50C1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the G12N50C1 transistor as follows.

Circuit diagram symbol of the G12N50C1 transistor

G12N50C1 Transistor Specification

Transistor Code G12N50C1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO218
Collector Power Dissipation (Maximum) Pc 75W
Collector-Emitter Voltage (Maximum) VCE 500V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 4.5V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 50

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