G10N50 IGBT Transistor

The G10N50 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the G10N50 transistor as follows.

G10N50 Transistor Specification

Transistor Code		G10N50
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO251AA
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	500V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		45

UXPython is not the creator or an official representative of the G10N50 IGBT transistor. You can download the official G10N50 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

NGTB75N65FL2 IGBT Transistor IXXX160N65C4 IGBT Transistor IQS2B57N120K4 IGBT Transistor FGPF4536 IGBT Transistor MUBW75-17T8 IGBT Transistor MMG50S120B6HN IGBT Transistor MWI100-12E8 IGBT Transistor IXA70I1200NA IGBT Transistor AP28G45GEM IGBT Transistor IRG6S330U IGBT Transistor IXBT42N170 IGBT Transistor IXGH30N30 IGBT Transistor MUBW30-12E6K IGBT Transistor NGTB60N60S IGBT Transistor FGL35N120FTD IGBT Transistor FF150R12RT4 IGBT Transistor APT80GP60JDQ3 IGBT Transistor 2SH20 IGBT Transistor IRG7PH42UD1M IGBT Transistor IXDR30N120 IGBT Transistor