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FII30-12E IGBT Transistor

The FII30-12E is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FII30-12E transistor as follows.

Circuit diagram symbol of the FII30-12E transistor

FII30-12E Transistor Specification

Transistor Code FII30-12E
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOPLUS_I4-PAC(5-LEA
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 2.4V
Collector Current (Maximum) IC 33A

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