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FII24N17AH1 IGBT Transistor

The FII24N17AH1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FII24N17AH1 transistor as follows.

Circuit diagram symbol of the FII24N17AH1 transistor

FII24N17AH1 Transistor Specification

Transistor Code FII24N17AH1
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package ISOPLUS_I4-PAC(5-LEA
Collector-Emitter Voltage (Maximum) VCE 1700V
Collector-Emitter Saturation Voltage VCE(on) 4.5V
Collector Current (Maximum) IC 18A

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