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FGY75N60SMD IGBT Transistor

The FGY75N60SMD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGY75N60SMD transistor as follows.

Circuit diagram symbol of the FGY75N60SMD transistor

FGY75N60SMD Transistor Specification

Transistor Code FGY75N60SMD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package POWER-247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 75.0A

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